Abstract
By X-ray diffraction, surface oxidation, X-ray microanalysis, electron diffraction, and electron microscopy, the state of silicon present in Siliconated pyrolytic graphite has been examined on several samples prepared under a variety of conditions.
In the siliconated pyrolytic graphite prepared at the deposition temperatures below 1730° C, the greater part of the silicon occurs as β-SiC, It does not segregate in the cone boundaries but disperses uniformly. It exists as flake-like single crystals, whose size increases with decreasing temperature. The (111) plane of β-SiC is parallel to the (00l) planes of graphite.
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Yajima, S., Hirai, T. Siliconated pyrolytic graphite. J Mater Sci 4, 424–431 (1969). https://doi.org/10.1007/BF00549708
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DOI: https://doi.org/10.1007/BF00549708