Abstract
The glass forming region for 2.0 g melts in the Si-As-Te system and pseudo ternary Si 5%-Ge-As-Te and Si 10%-Ge-As-Te systems are reported together with glass transition temperatures and metastable glass melt crystallisation temperatures for bulk glass pieces of different compositions heated at 20°C/min under standardised conditions in a nitrogen atmosphere.
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References
S. R. Ovshinsky, Phys. Rev. Letts. 21 (1968) 1450.
H. Fritzsche and S. R. Ovshinsky, J. Non-Cryst. Solids 2 (1970) 148.
D. Adler, Electronics 49 No. 20 (1970) 61.
J. A. Savage, J. Mater. Sci. 6 (1971) 964.
S. Iizima, M. Sugi, M. Kikuchi, and K. Tanaka, Solid State Comm. 8 (1970) 153.
H. J. Stocker, Appl. Phys. Letts. 15 (1969) 55.
A. R. Hilton and M. Brau, Infrared Phys. 3 (1963) 69.
G. V. Bunton, J. Non-Cryst. Solids 6 (1971) 72.
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Savage, J.A. Glass-forming region and DTA survey of some glasses in the Si-Ge-As-Te threshold switching glass system. J Mater Sci 7, 64–67 (1972). https://doi.org/10.1007/BF00549551
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DOI: https://doi.org/10.1007/BF00549551