Abstract
The identification of the polar surfaces of silicon carbide with an alkaline solution was investigated by phase-contrast microscopy and two-beam interferometry. It is found that the alkaline solution produces growth patterns on the (0001) carbon surface, while the opposite (0001) silicon surface remains essentially unaffected. The merit of polarity determination by a growth method combined with phase-microscopy was proposed.
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Kijima, K., Komatsu, H. On the identification of the polar surfaces of SiC crystals. J Mater Sci 7, 19–22 (1972). https://doi.org/10.1007/BF00549544
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DOI: https://doi.org/10.1007/BF00549544