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Epitaxial growth and structure of ZnTe evaporated on to Ge in vacuum

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Abstract

ZnTe was evaporated by electron-beam heating in high vacuum on to (111) and (100) surfaces of Ge. In both cases the epitaxial range of substrate temperatures was from 300 to about 430° C. In both cases the films had the sphalerite structure and grew in parallel alignment with the substrate. Some (111) films grown at temperatures in the upper portion of the epitaxial range gave diffraction patterns containing satellite spots showing that these films contained twins. Most films grown in the lower portion of the epitaxial temperature range for (111) substrates and films grown on (100) substrates at all epitaxial temperatures, however, were free of twins and included grains and their diffraction patterns contain neither satellite spots nor streaks. Moire fringe observations of these more perfect specimens showed that any misalignments of portions of the films with the substrates were 0.5° or less. The best (111) films contained about 1010 bent stacking faults per cm2.

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Authors and Affiliations

  1. Metallurgy Department, Imperial College of Science and Technology, London, S.W.7, UK

    A. R. Mufti & D. B. Holt

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  1. A. R. Mufti
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  2. D. B. Holt
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Mufti, A.R., Holt, D.B. Epitaxial growth and structure of ZnTe evaporated on to Ge in vacuum. J Mater Sci 7, 694–700 (1972). https://doi.org/10.1007/BF00549382

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