Journal of Materials Science

, Volume 26, Issue 8, pp 2007–2014 | Cite as

Electrical properties of thin oxidized aluminium films

  • F. M. Reicha
  • M. A. El Hiti
  • P. B. Barna


Thin aluminium films of thickness 40 to 200 nm were deposited on to glass substrates at 573 K in a high vacuum. The deposition was carried out layer by layer and the interfaces between these layers were exposed to oxygen. The electrical resistivity was studied as a function of the film thickness, annealing time, annealing temperature and oxygen pressure. The temperature coefficient of resistivity and the activation energy for the conduction electrons were studied as a function of the film thickness and oxygen pressure. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results. The mean free path of the conduction electrons was calculated as a function of temperature and agreed well with the theoretical relation.


Oxygen Polymer Aluminium Activation Energy Electrical Conduction 
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Copyright information

© Chapman and Hall Ltd. 1991

Authors and Affiliations

  • F. M. Reicha
    • 1
  • M. A. El Hiti
    • 2
  • P. B. Barna
    • 3
  1. 1.Department of Physics, Faculty of ScienceMansura UniversityMansuraEgypt
  2. 2.Department of Physics, Faculty of ScienceTanta UniversityTantaEgypt
  3. 3.Research Institute for Technical Physics HASBudapestHungary

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