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Journal of Materials Science

, Volume 26, Issue 10, pp 2725–2730 | Cite as

Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples

  • B. Pivac
  • A. Borghesi
  • R. Canteri
  • M. Anderle
Papers
  • 20 Downloads

Abstract

Several techniques were used to study a surface layer structure of edge-defined film-fed grown polycrystalline silicon samples grown in CO gas deliberately added to the purging atmosphere. Although infrared analysis reveals the presence of cubic SiC structures, other techniques, such as spectroscopic ellipsometry and Raman spectroscopy, do not detect its presence. It is concluded that a layer with specific structure, formed in the course of ribbon growth, consists of indiffused oxygen formed upon reaction of CO gas with molten Si. Indiffused oxygen, in turn, induces coaggregation of carbon and silicon selfinterstitials that probably play the role of SiC nucleation centres, but do not have the thermal stability of SiC.

Keywords

Oxygen Polymer Spectroscopy Silicon Atmosphere 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd 1991

Authors and Affiliations

  • B. Pivac
    • 1
  • A. Borghesi
    • 1
  • R. Canteri
    • 2
  • M. Anderle
    • 2
  1. 1.Dipartimento di FisicaUniversita di PaviaPaviaItaly
  2. 2.IRST-Divisione di Scienza del MaterialiPovoItaly

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