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Defect structure and electrical conductivity in rapidly-quenched and slowly-cooled rhombohedral solid solutions of the system Bi2O3-BaO

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Abstract

The solid solubility limit, grain orientation, defect structure and electrical conductivity of solidified rhombohedral specimens in the Bi2O3-BaO system are described. The c-axes (in hexagonal notation) of solidified specimens were almost entirely oriented along the platelet/film thickness. Slow-cooling (∼ 10−2° Csec−1) of the system gave solid solutions with substitutional type of 2BaO → 2BaBi′ + 20+ V ..0 for 12 to 32 mol % BaO. High-temperature modification of slowly-cooled sample (16 mol % BaO) showed a conductivity of 8.8×10−1 Ω−1 cm −1 at 600° C along the conduction plane (perpendicular to the c-axis). Rapid quenching (∼ 105° C sec−1) produced solid solutions for 8 to 20 mol % BaO introducing interstitial Ba2+ (10–12 mol % BaO) and Schottky type defects such as VBi‴ and V Bi and V ..0 (16 to 20 mol % BaO), however the high-temperature modification of the rhombohedral structure could not be frozen.

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Suzuki, T., Dansui, Y., Shirai, T. et al. Defect structure and electrical conductivity in rapidly-quenched and slowly-cooled rhombohedral solid solutions of the system Bi2O3-BaO. J Mater Sci 20, 3125–3130 (1985). https://doi.org/10.1007/BF00545177

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