Journal of Materials Science

, Volume 24, Issue 12, pp 4392–4398 | Cite as

A.c. conduction mechanism and dielectric properties of co-evaporated SiO/B2O3 amorphous thin films

  • M. H. Islam
  • C. A. Hogarth


The a.c. electrical properties on Al-SiO/B2O3-Al sandwich devices with various compositions of SiO/B2O3 were studied over a frequency range of 2×102 to 1×106 Hz and in the temperature range 158 to 463 K. The a.c. conductance G varies with frequency according to the relation G∝ωs, where the exponent s was found to be 0.92 (at 158 K) in the frequency range 8×102 to 2×104 Hz and above 105 Hz the conductance shows a square law dependence on frequency. These results suggest that the a.c. conduction mechanism in SiO/B2O3 thin films is due to an electronic hopping process. The numbers of localized sites were calculated using the conductivity relations given by Elliott and by Pollak and the results are compared. The effects of composition, temperature and annealing on the dielectric constant and loss factor were studied. The relative dielectric constant and loss factor were found to decrease with the increase of B2O3 content in SiO. Annealing of the samples reduces the values of the dielectric constant, loss factor tan δ, temperature coefficient of capacitance and a.c. conductivity. The variation in capacitance with the composition of SiO/B2O3 was investigated at room temperature, the results being normalized to 10 kHz. The dispersion was found to decrease with the addition of B2O3 into SiO.


Polymer Thin Film Dielectric Constant Electrical Property Dielectric Property 
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Copyright information

© Chapman and Hall Ltd 1989

Authors and Affiliations

  • M. H. Islam
    • 1
  • C. A. Hogarth
    • 1
  1. 1.Department of PhysicsBrunel UniversityUxbridgeUK

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