Journal of Materials Science

, Volume 24, Issue 12, pp 4253–4260 | Cite as

Intermediate temperature oxidation in silicon nitride yttria ceramics

  • Kamal E. Amin
  • Kerry N. Siebein
  • Jonathan A. Wade


Silicon nitride billets with both 4% and 8% Y2O3 additives have been subjected to oxidation treatments for up to 300 h, in air, in the temperature range 700 to 1000° C. Flexure strength and weight gain measurements together with both scanning and transmission electron microscopy and X-ray diffraction studies were conducted on these billets in an effort to understand the oxidation process. It appears that the degradation phenomena is associated with both the formation of phases outside the Si3N4-Si2ON2-Y2Si2O7 compatibility triangle of the system Si3N4-SiO2-Y2O3 and with the decomposition of W-containing phases at and near the grain boundaries.


Oxidation Transmission Electron Microscopy Weight Gain Nitride Yttria 
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Copyright information

© Chapman and Hall Ltd 1989

Authors and Affiliations

  • Kamal E. Amin
    • 1
  • Kerry N. Siebein
    • 1
  • Jonathan A. Wade
    • 1
  1. 1.Advanced CeramicsNorton CompanyNorthboroUSA

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