Journal of Materials Science

, Volume 18, Issue 11, pp 3387–3392 | Cite as

Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solution

  • Takashi Goto
  • Toshio Hirai


Amorphous Si3N4-C[Am.CVD-(Si3N4] composites (C: 0.6 to 6 wt%) were prepared by chemical vapour deposition (CVD) using SiCl4, H2, NH3and C3H8 gases, and their etching characteristics in 47% hydrofluoric acid (HF) solution were investigated in the temperature range of 25 to 50° C. It was found that the etching rate decreases with increasing carbon content. The etching rate of the Am.CVD-(Si3N4-C) composite containing 6 wt% carbon was about 1/40 of the rate for carbon free Am.CVD-Si3N4. The activation energies obtained from the temperature dependence of the etching rates were 11 to 17 kcal mol−1, which increased with increasing carbon content. This paper also presents the study on the characteristics of the etched surfaces as well as the carbon state in the Am.CVD-(Si3N4-C) composites, and finally the possible etching mechanism is discussed.


Polymer Activation Energy C3H8 Carbon Content Chemical Vapour Deposition 
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Copyright information

© Chapman and Hall Ltd 1983

Authors and Affiliations

  • Takashi Goto
    • 1
  • Toshio Hirai
    • 1
  1. 1.The Research Institute for Iron, Steel and Other MetalsTohoku UniversitySendaiJapan

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