Abstract
The microstructure of the oxide scales, primarily the size, distribution, and density of the pits, was characterized in hot-pressed Si3N4 oxidized at different temperatures from 1300 to 1450‡ C. These microstructural features and the chemical changes in Si3N4 due to oxidation were related to the elevated-temperature subcritical crack-growth (SCG) behaviour. Oxidation at 1375‡ C for 240h resulted in a measurable improvement in SCG over that in as-hot-pressed and 1300‡ C-oxidized Si3N4.
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F. F. Lang, J. Amer. Ceram. Soc. 57 (1974) 84.
A. G. Evans and S. M. Wiederhorn, J. Mater. Sci. 9 (1974) 270.
A. G. Evans, M. Linzer and L. R. Russell, Mater. Sci. Eng. 15 (1974) 253.
A. G. Evans, in “Ceramics for High Performance Applications”, Proceedings of the Second Army Materials Technology Conference, Hyannis, Massachusetts, 13 to 16 November 1973, edited by J. J. Burke, A. E. Gorum and R. N. Kate (Brook Hill Publishing Co., Chestnut Hill, MA, 1974) p. 373.
K. D. McHenry and R. E. Tressler, J. Amer. Ceram. Soc. 63 (1980) 152.
S. C. Singhal, J. Mater. Sci. 11 (1976) 500.
D. Cubiccioyti, K. H. Lau and R. L. Jones, J. Electrochem. Soc. 124 (1977) 1955.
F. F. Lange and B. I. Davis, Bull. Amer. Ceram. Soc. 59 (1980) 827.
M. G. Medniratta and J. J. Petrovic, J. Amer. Ceram. Soc. 61 (1978) 226.
W. C. Tripp and H. C. Graham, ibid. 59 (1976) 399.
A. J. Kiehle, L. K. Heung, P. J. Gielisse and T. J. Rockett, ibid. 58 (1975) 17.
J. M. Birch and B. Wilshire, J. Mater. Sci. 13 (1978) 2927.
B. S. B. Karunatatne and M. H. Lewis, ibid. 15 (1980) 1781.
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Das, G., Mendiratta, M.G. & Cornish, G.R. Microstructures and subcritical crack growth in oxidized hot-pressed Si3N4 . J Mater Sci 17, 2486–2494 (1982). https://doi.org/10.1007/BF00543879
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DOI: https://doi.org/10.1007/BF00543879