Abstract
The effects of different electric fields (4.2, 8.3, 12.5, 16.7 and 20.8 Vcm−1) on the sheet resistance, R s, and optical band gap, E obg, of As2Se3 samples (1×105nm) that were photodoped by Ag (5×103nm) have been studied. The R s and E obg of samples subjected to an electric field of 12.5 Vcm−1 decrease linearly to a distance of 5 mm from both electrodes, and then saturate at larger distances. This result suggests that there is a critical value of the electric field which affects photodoping. The dependence of R s and E obg on the distance from the electrodes shows similar profiles for these electrodes.
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Kang, T.W., Hong, C.Y., Chong, C.S. et al. Effects of electric fields on the silver photodoping of As2Se3 films. J Mater Sci 27, 5620–5622 (1992). https://doi.org/10.1007/BF00541632
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DOI: https://doi.org/10.1007/BF00541632