Journal of Materials Science

, Volume 27, Issue 20, pp 5531–5535 | Cite as

Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures

  • T. W. Kim
  • H. Lim
  • Y. D. Zheng
  • A. A. Reeder
  • B. D. Mccombe


Metallorganic chemical vapour deposition of Al2O3 from Al(O-C3H7)3 via pyrolysis at low (∼280 °C) temperature was investigated with the goal of producing high quality Al2O3/p-InP (1 0 0) and Al2O3/p-Si (1 0 0) interfaces. Ellipsometer measurements of Al2O3 have determined the refractive index of the film to be about 1.55. Room temperature capacitance-voltage measurements were used to characterize the electrical properties of the structures after metal gate electrodes have been deposited. Low temperature conductance-voltage measurements were also carried out to investigate the quality of the Al2O3/InP interfaces. The interface state densities Al2O3/p-InP and Al2O3/p-Si determined from deep-level transient spectroscopy were approximately 1012 eV−1 cm−2 and 1011 eV−1 cm−2.


Polymer Spectroscopy Al2O3 Refractive Index Pyrolysis 
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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • T. W. Kim
    • 1
  • H. Lim
    • 2
  • Y. D. Zheng
    • 3
  • A. A. Reeder
    • 3
  • B. D. Mccombe
    • 3
  1. 1.Department of PhysicsKwangwoon UniversityNowon-Ku, SeoulKorea
  2. 2.Department of Electronics EngineeringAjou UniversitySuwonKorea
  3. 3.Department of Physics and AstronomyState University of New York at BuffaloUSA

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