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Analysis of thermally stimulated discharge data on amorphous semiconductors

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Abstract

This paper deals with the most common methods of interpretation of the thermally stimulated discharge (TSD) spectrum. TSD due to dipole disorientation, calculation of activation energies using initial rise method, graphical integration, and methods based on the variation of heating rates are described in some detail. It will be argued that calculation of activation energies from these methods strictly holds for relaxation of a single well-defined frequency. For a distributed relaxation, methods based on the variations of the heating rates are more appropriate, but certain difficulties may arise.

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Authors and Affiliations

  1. Electronic Research Group, School of Engineering, Thames Polytechnic, Wellington Street, SE18 6PF, London, UK

    S. M. Vaezi-Nejad

  2. Solid State Research Group, Department of Electrical Engineering, Imperial College of Science, Technology and Medicine, Exhibition Road, SW7 2BT, London, UK

    B. M. Z. Kamarulzaman & C. Juhasz

Authors
  1. S. M. Vaezi-Nejad
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  2. B. M. Z. Kamarulzaman
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  3. C. Juhasz
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Vaezi-Nejad, S.M., Kamarulzaman, B.M.Z. & Juhasz, C. Analysis of thermally stimulated discharge data on amorphous semiconductors. J Mater Sci 27, 4311–4315 (1992). https://doi.org/10.1007/BF00541558

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  • DOI: https://doi.org/10.1007/BF00541558

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