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Journal of Materials Science

, Volume 12, Issue 5, pp 873–883 | Cite as

A structural study of some SnO2-Sb2O5 semiconducting glazes

  • R. H. Taylor
Papers

Abstract

The use of resistive glazes on high tension insulators to control flashover caused by pollution has proved only partially successful as a result of deterioration of the glazes in service. The most promising and now most widely used glaze relies upon the semiconducting properties of SnO2 doped with Sb2O5, incorporated in an alumino-silicate base glaze. The structure of glazes containing various amounts of SnO2 has been studied by a variety of techniques and particularly by scanning microscopy and electron probe microanalysis. These techniques have revealed both the existence and composition of relatively conducting and relatively insulating areas in the glaze, and a detailed analysis of the distribution of all the elements across the glaze surface and through the glaze thickness has been carried out. The results of this structural survey suggest that activated conduction proceeds through overlapping solubility rims around SnO2 particles in the glaze.

Keywords

Polymer Microscopy Detailed Analysis SnO2 Structural Study 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1977

Authors and Affiliations

  • R. H. Taylor
    • 1
  1. 1.Central Electricity Research LaboratoriesLeatherheadUK

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