Journal of Materials Science

, Volume 10, Issue 8, pp 1367–1374 | Cite as

Damage in gallium arsenide crystals produced by ion implantation, abrasion and ball-milling

  • T. Tunkasiri
  • D. Lewis
Papers

Abstract

Gallium arsenide single crystals implanted with tellurium and cadmium ions at 50 and 150 keV at room temperature were examined using RHEED. Damage depth profiles were measured. Annealing was carried out to investigate the effect of temperature on the implantation damage. These effects which proved to be very complicated, included decomposition of the gallium arsenide, formation of beta gallium oxide and gallium telluride, and preferred orientation of the gallium arsenide. Comparisons were made with the annealing behaviour of ball-milled gallium arsenide using X-ray diffraction line broadening. The effects of various types of mechanical damage associated with specimen polishing of the gallium arsenide single crystals were also investigated.

Keywords

Cadmium Gallium Prefer Orientation Depth Profile Tellurium 

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Copyright information

© Chapman and Hall Ltd. 1975

Authors and Affiliations

  • T. Tunkasiri
    • 1
  • D. Lewis
    • 1
  1. 1.Chemical Physics DepartmentUniversity of SurreyGuildfordUK

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