Journal of Materials Science

, Volume 10, Issue 8, pp 1367–1374 | Cite as

Damage in gallium arsenide crystals produced by ion implantation, abrasion and ball-milling

  • T. Tunkasiri
  • D. Lewis


Gallium arsenide single crystals implanted with tellurium and cadmium ions at 50 and 150 keV at room temperature were examined using RHEED. Damage depth profiles were measured. Annealing was carried out to investigate the effect of temperature on the implantation damage. These effects which proved to be very complicated, included decomposition of the gallium arsenide, formation of beta gallium oxide and gallium telluride, and preferred orientation of the gallium arsenide. Comparisons were made with the annealing behaviour of ball-milled gallium arsenide using X-ray diffraction line broadening. The effects of various types of mechanical damage associated with specimen polishing of the gallium arsenide single crystals were also investigated.


Cadmium Gallium Prefer Orientation Depth Profile Tellurium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Science Research Council, Ion Implantation Report (1970).Google Scholar
  2. 2.
    Idem, ibid (1973).Google Scholar
  3. 3.
    R. Bicknell, P. L. F. Hemment, E. C. Bell and J. E. Tansay, Phys. Stat. (a) 12 (1972) k9.Google Scholar
  4. 4.
    B. J. Sealy and P. L. F. Hemment, Thin Solid Films 22 (1974) S39.Google Scholar
  5. 5.
    B. J. Sealy, Rad. Effects, to be published.Google Scholar
  6. 6.
    W. A. Rachinger, J. Sci. Inst. 25 (1948) 254.Google Scholar
  7. 7.
    C. N. J. Wagner, “Local atomic arrangements by X-ray Diffraction” (Gordon & Breach, New York, London and Paris, 1966).Google Scholar
  8. 8.
    G. K. Williamson and R. E. Smallman, Phil. Mag. 1 (1956) 34.Google Scholar
  9. 9.
    D. J. Mazey and R. S. Nelson, Rad. Effects 1 (1969) 229.Google Scholar
  10. 10.
    R. B. Kehoe, R. C. Newman and D. W. Pashley, J. Sci. Inst. 31 (1954) 399.Google Scholar
  11. 11.
    A. C. Adams and B. R. Pruniaux, J. Electrochem. 120 (1973) 408.Google Scholar
  12. 12.
    A. Y. Cho, Surface Sci. 17 (1969) 494.Google Scholar
  13. 13.
    B. K. Sarkar and J. M. Towner, J. Mater. Sci. 6 (1971) 182.Google Scholar
  14. 14.
    D. Lewis and L. J. Porter, J. Appl. Cryst. 2 (1969) 249.Google Scholar
  15. 15.
    B. J. Sealy, unpublished work.Google Scholar
  16. 16.
    W. S. Johnson and J. F. Gibbons, “Projected Range Statistics in Semiconductors” (Stanford University, 1970).Google Scholar
  17. 17.
    D. Gillies, Ph.D. Thesis University of Surrey (1969).Google Scholar
  18. 18.
    D. Lewis and E. J. Wheeler, J. Mater. Sci. 4 (1969) 681.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1975

Authors and Affiliations

  • T. Tunkasiri
    • 1
  • D. Lewis
    • 1
  1. 1.Chemical Physics DepartmentUniversity of SurreyGuildfordUK

Personalised recommendations