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Journal of Materials Science

, Volume 10, Issue 8, pp 1360–1366 | Cite as

Properties of PbS1−xSe x epilayers deposited onto PbS substrates by hot-wall epitaxy

  • K. Duh
  • H. Preier
Papers

Abstract

Properties of PbS1−xSe x , epilayers deposited onto PbS substrates by hot-wall epitaxy (HWE) have been investigated. By compensating with a secondary selenium vapour source, both n- and p-type epilayers with carrier concentrations up to 1018 cm−3 have been obtained. Alloy compositions were determined using an X-ray method and found to be dependent upon the selenium furnace temperatures used during growth. Diodes were fabricated from wafers consisting of n-type substrates and p-type PbS1−xSe x epilayers of various compositions. Typical R0A products are 5 ω cm2 for x=0.70. Microprobe analysis indicated that the junctions are abrupt. Diode properties were found to be strongly dependent upon the qualities of the substrates used for epitaxy deposition.

Keywords

Polymer Furnace Selenium Carrier Concentration Alloy Composition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1975

Authors and Affiliations

  • K. Duh
    • 1
  • H. Preier
    • 1
  1. 1.AEG-Telefunken ForschungsinstitutFrankfurt am Main 71Germany

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