Specific sintering by temperature impulses as a mechanism of formation of a TiN layer in the reactive pulse plasma
- 34 Downloads
A layer of separate TiN particles was fabricated and temperature pulsed in order to determine whether the short lasting intense heat of the deposited clusters can lead to their sintering. It was found that a specific sintering process is inseparably involved in the process of crystallization of the layer from the pulse plasma. The pulse heating also causes an increase in the adhesion of the layer to the substrate.
KeywordsPolymer Crystallization Sinter Process Pulse Heating Pulse Plasma
Unable to display preview. Download preview PDF.
- 1.M. Sokołowki, A. Sokołowska, A. Michalski, Z. Romanowski, A. Rusek-Mazurek and M. Wronikowski, Thin Solid Films 80 (1981) 249.Google Scholar
- 2.A. Michalski and Z. Romanowski, J. Cryst. Growth 61 (1983) 675.Google Scholar
- 3.M. Sokołowski, A. Sokołowska, B. Gokieli, A. Michalski, A. Rusek and Z. Romanowski, ibid. 47 (1979) 421.Google Scholar
- 4.A. Sokołowska, J. Walkowicz and A. Olszyna, in “Proceedings of the International Conference on Plasma Science and Technology” (Science Press, Beijing, China, 1986) p. 572.Google Scholar