Abstract
The wetting behaviour of Si3N4 by alkaline-doped MgSiO3 was investigated by the sessile drop method. It is shown that the alkaline oxide additions improve the wetting of MgSiO3 on Si3N4. The hot-pressing of Si3N4 is controlled by a liquid phase sintering process where the dissolution of Si3N4 in silicate glass promotes good wetting and a well bonded interface by lowering the liquid-solid interfacial energy. Controlling total alkaline impurity level between 50 and 100 ppm is suggested for an optimal strength performance.
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Kossowsky, R. Wetting of silicon nitride by alkaline-doped MgSiO3 . J Mater Sci 9, 2025–2033 (1974). https://doi.org/10.1007/BF00540552
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DOI: https://doi.org/10.1007/BF00540552