The application of the loop annealing technique to self diffusion studies in silicon

Abstract

The loop annealing technique has been applied to the study of self diffusion in silicon over a wide range of doping concentrations. The results show that the diffusion coefficient decreases as the concentration of n-type dopant decreases and the concentration of p-type dopant increases. At a fixed temperature, the diffusion coefficient is linearly dependent on the electron concentration and this behaviour is in accord with the point defects responsible for self diffusion behaving as acceptors. The values obtained for the self diffusion coefficient in intrinsic material are in good agreement with those obtained by other workers at higher temperatures using profiling techniques and indicate a slight curvature in the Arrhenius plot.