Abstract
The parabolic oxidation behaviour of silicon nitride hot pressed from compositions of the Si3N4-Si2N2O-Y2Si2O7 subsystem studied in 98 kPa air and 1273 to 1673 K has been discussed in terms of a diffusion model in which the most relevant parameters are the amount of the grain boundary phase, the width of the diffusion zone and the concentration gradient at the Si3N4/oxide reaction interface. The model accounts for both kinetic (oxidation rate constants) and thermodynamic (apparent activation energy for oxidation) variations with amount and composition of the grain boundary phase and proves suitable for the extension to other additive systems. The apparent activation energy for oxidation ranged from 260 to 623 kJ mol−1 according to composition. It is suggested that a more appropriate evaluation of the thermodynamic parameters of the diffusion process must account for the variation of concentration profiles of the diffusing species with temperature.
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Babini, G.N., Bellosi, A. & Vincenzini, P. A diffusion model for the oxidation of hot pressed Si3N4-Y2O3-SiO2 materials. J Mater Sci 19, 1029–1042 (1984). https://doi.org/10.1007/BF00540473
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DOI: https://doi.org/10.1007/BF00540473