Electrical properties of p+/n+ In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy
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p+/n+ In0.53Ga0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×103 Ω−1 cm−2), high peak current densities (793 A/cm2) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.
PACS72.20 85.30 81.10
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- 1.C. Amano, H. Sugiura, A. Yamamoto, M. Yamaguchi: 20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy. Appl. Phys. Lett. 51, 1998 (1987)Google Scholar
- 2.P.K. Chiang, M.L. Timmons, G.G. Fountain, J. A. Hutchby: Patterned Ge tunnel junction as cell interconnects for multijunction, monolithic cascade solar cell. Proc. 18th IEEE Photovoltaic Specialist Conf. (1985) p. 562Google Scholar
- 3.M. Yamaguchi, K. Ando, C. Uemura: Carrier concentration effects on radiation damage in InP. J. Appl. Phys. 55, 3160 (1984)Google Scholar
- 4.T.P. Pearsall, R. Bisaro, P. Merenda, G. Laurencin, R. Ansel, J.C. Portal, C. Houlbert, M. Quillec: The characterization of Ga0.47In0.53As grown lattice-matched on Inp substrates. In GaAs and Related Compound, St. Louis (Inst. of Physics, London 1979) p. 94Google Scholar
- 5.S.K. Ghandhi, R.T. Huang, J.M. Borrego: Fabrication of GaAs tunnel junctions by a rapid thermal diffusion process. Appl. Phys. Lett. 48, 415 (1986)Google Scholar
- 6.D.L. Miller, S.W. Zehr, J.S. Harris, Jr.: GaAs-AlGaAs tunnel junctions for multigap cascade solar cells. J. Appl. Phys. 53, 744 (1982)Google Scholar
- 7.E.O. Kane: Theory of Tunneling. J. Appl. Phys. 32, 83 (1961)Google Scholar
- 8.K. Alavi, R.L. Aggarwal, S.H. Groves: Interband magnetoabsorption of In0.53Ga0.47As. Phys. Rev. B 21, 1311 (1980)Google Scholar
- 9.C.C. Shen, P.T. Chang, K.Y. Choi: Photovoltaic properties of 0.95 eV p/n InGaAsP homojunction solar cells prepared by liquid phase epitaxy. IEEE Trans. ED-37, 464 (1990)Google Scholar
- 10.C.C. Shen, K.Y. Choi: High conversion efficiency p − n + InP homojunction solar cells: IEEE EDL-6, 78 (1985)Google Scholar
- 11.K.Y. Choi, C.C. Shen: p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy. J. Appl. Phys. 63, 1198 (1988)Google Scholar