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Applied Physics A

, Volume 56, Issue 2, pp 153–155 | Cite as

Electrical properties of p+/n+ In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy

  • C. C. Shen
  • P. T. Chang
  • K. Y. Choi
Surfaces And Multilayers

Abstract

p+/n+ In0.53Ga0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×103 Ω−1 cm−2), high peak current densities (793 A/cm2) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.

PACS

72.20 85.30 81.10 

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Copyright information

© Springer-Verlag 1993

Authors and Affiliations

  • C. C. Shen
    • 1
  • P. T. Chang
    • 1
  • K. Y. Choi
    • 1
  1. 1.Center for Solid State Electronics ResearchArizona State UniversityTempeUSA

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