Applied Physics A

, Volume 56, Issue 2, pp 123–126 | Cite as

Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing

  • Chang Woo Lee
  • Choochon Lee
  • Yong Tae Kim
Surfaces And Multilayers


Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Corning 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730° C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 Å, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry.


72.60.+g 81.15.Gh 81.10.Jt 


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Copyright information

© Springer-Verlag 1993

Authors and Affiliations

  • Chang Woo Lee
    • 1
  • Choochon Lee
    • 1
  • Yong Tae Kim
    • 2
  1. 1.Department of PhysicsKorea Advanced Institute of Science and TechnologyTaejonKorea
  2. 2.Semiconductor Materials LaboratoryKorea Institute of Science and TechnologyCheongryang, SeoulKorea

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