Applied Physics A

, Volume 56, Issue 2, pp 123–126 | Cite as

Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing

  • Chang Woo Lee
  • Choochon Lee
  • Yong Tae Kim
Surfaces And Multilayers

Abstract

Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Corning 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730° C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 Å, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry.

PACS

72.60.+g 81.15.Gh 81.10.Jt 

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References

  1. 1.
    H. Tanaka, T. Sakai, M. Shimbo, S. Arai, T. Yamazaki: Appl. Phys. A 41, 311 (1986)Google Scholar
  2. 2.
    M. Hatalis, D. Greve: J. Appl. Phys. 63, 2260 (1988)Google Scholar
  3. 3.
    N.T. Trans, M.P. Keyes, S. Shiffman, G. Liu, S.J. Fonash: Int'l Conf. on Solid State Device and Materials (Yokohama, 1991) p. 617–619Google Scholar
  4. 4.
    E. Korin, R. Reif, B. Mikic: Thin Solid Films 167, 101 (1988)Google Scholar
  5. 5.
    Yong Tae Kim, Suk-Ki Min, Jong Sung Hong, Choong Ki Kim: Appl. Phys. Lett. 58, 837 (1991)Google Scholar
  6. 6.
    R. Kakkad, J. Smith, W.S. Lau, S.J. Fonash, R. Kerns: J. Appl. Phys. 65, 209 (1989)Google Scholar
  7. 7.
    W.E. Spear, D. Allan, P. LeComber, A. Gaith: J. Non-Cryst. Solid 35 & 36, 357 (1980)Google Scholar
  8. 8.
    E.W. Nufield: X-Ray Diffraction Methods (Wiley, New York 1966) p. 147Google Scholar
  9. 9.
    S. Vepřek, Z. Igbal, H.R. Oswald, A.P. Web: J. Phys. C 14, 295 (1981)Google Scholar

Copyright information

© Springer-Verlag 1993

Authors and Affiliations

  • Chang Woo Lee
    • 1
  • Choochon Lee
    • 1
  • Yong Tae Kim
    • 2
  1. 1.Department of PhysicsKorea Advanced Institute of Science and TechnologyTaejonKorea
  2. 2.Semiconductor Materials LaboratoryKorea Institute of Science and TechnologyCheongryang, SeoulKorea

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