Abstract
A stock solution sol-gel based method for making Barium Strontium Titanate (BST) thin films has been developed. A modified titanium alkoxide was combined with a barium and/or strontium inorganic salt in methoxyethanol and ethylene glycol to form the solution. The effect of chemistry on the stability of this BST solution is discussed. The crystallization temperature of 700–725°C for rapid thermally processed films dropped by 100°C using cerium doping. The permittivity for undoped films was ≈250 and doping by 3 at. % Ce increased the dielectric constant by 20%. A remanent polarization of approximately 0.5 μC/cm2 and coercive field of 28 kV/cm were measured for the undoped films. The leakage current densities were <10 nA/cm2 at E=60 kV/cm and improved for cerium concentrations up to 3 at. %. The charge storage density was ≈50 fF/μm2 at 200 kV/cm and the DC breakdown voltage was 300 kV/cm for Ce doped films.
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Sedlar, M., Sayer, M. & Weaver, L. Sol-gel processing and properties of cerium doped Barium Strontium Titanate thin films. J Sol-Gel Sci Technol 5, 201–210 (1995). https://doi.org/10.1007/BF00487017
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DOI: https://doi.org/10.1007/BF00487017