Journal of Sol-Gel Science and Technology

, Volume 2, Issue 1–3, pp 563–567 | Cite as

Sol-gel films for integrated circuits

Code: EP19
  • A. S. Sigov
  • K. A. Vorotilov
  • A. S. Valeev
  • M. I. Yanovskaya
Article

Abstract

It is presented a brief overview of our results in the field of harnessing sol-gel techniques for promoting thin films in microelectronics technology. We discuss the problem of multilevel interconnection of IC, preparation of ferroelectric films, taper etching of oxide films, formation of isolating and passivating coatings on compound semiconductors, production of barrier zirconia and titania films, as well as certain aspects of practical use of the method in microelectronics.

Keywords

sol-gel method microelectronics planarization ferroelectrics 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Gupta, S.K. and Chin, R.L., in Microelectron. Processing: Inorg. Mater. Charact. (Washington, DC, 1986), p. 349.Google Scholar
  2. 2.
    Gupta, S.K., MRS Symp. Proc. 108, 275 (1988).Google Scholar
  3. 3.
    Valeev, A.S., Vorotilov, K.A., and Petrovsky, V.I., Elektronnaya Tekhnika (ser. 3) 2, 54 (1991) (in Russian).Google Scholar
  4. 4.
    Scott, J.F., Paz De Arauijo, C.A., and McMillian, L.D., Condensed Matter News, 1, 16 (1992).Google Scholar
  5. 5.
    Petrovsky, V.I., Sigov, A.S., and Vorotilov, K.A., Integrated Ferroelectrics 3, 59 (1993).Google Scholar
  6. 6.
    Vorotilov, K.A., Orlova, E.V., Petrovsky, V.I., and Turevskaya, E.P., Elektronnaya Tekhnika (ser.6) 4, 25 (1987) (in Russian).Google Scholar
  7. 7.
    Vorotilov, K.A., Orlova, E.V., Petrovsky, V.I., Yanovskaya, M.I., Ivanov, S.A., Turevskyaya, E.P., and Turova, N. Ya, Ferroelectrics 123, 261 (1991).Google Scholar
  8. 8.
    Vorotilov, K.A., Yanovskaya, M.I., and Dorokhova, O.A., Integrated Ferroelectrics 3, 33 (1993).Google Scholar
  9. 9.
    Orlova, E.V., Petrovsky, V.I., Pevtsov, E.F., Sigov, A.S., and Vorotilov, K.A., Ferroelectrics 134, 365 (1992).Google Scholar
  10. 10.
    Scott, J.F., Pazz De Araujo, C.A., and McMillan, L.D., et al, Ferroelectrics 133, 47 (1992).Google Scholar
  11. 11.
    Chol, Y.I., Kim, C.K., and Kwon, Y.S., IEE Proc. Part I 133, 13 (1986).Google Scholar
  12. 12.
    Vorotilov, K.A., Orlova, E.V., and Petrovsky, V.I., Thin Solid Films 209, 188 (1992).Google Scholar
  13. 13.
    Vorotilov, K.A., Krikunov, I.P., Orlova, E.V., and Petrovsky, V.I., Elektronnaya Tekhnika (ser. 2) 1, 75 (1989) (in Russian).Google Scholar
  14. 14.
    Vorotilov, K.A., Orlova, E.V., and Petrovsky, V.I., Elektronnaya Tekhnika (ser. 2) 3, 212 (1989) (in Russian).Google Scholar
  15. 15.
    Maleto, M.I., Solovieva, L.I., Turevskyaya, E.P., Vorotilov, K.A., and Yanovskaya, M.I., Thin Solid Films, in the press.Google Scholar
  16. 16.
    Vorotilov, K.A., Orlova, E.V., and Petrovsky, V.I., Thin Solid Films 207, 180 (1992).Google Scholar

Copyright information

© Kluwer Academic Publishers 1994

Authors and Affiliations

  • A. S. Sigov
    • 1
  • K. A. Vorotilov
    • 1
  • A. S. Valeev
    • 2
  • M. I. Yanovskaya
    • 3
  1. 1.Moscow Institute of Radioengineering, Electronics and AutomationMoscowRussia
  2. 2.Scientific Research Institute of Molecular ElectronicsMoscowRussia
  3. 3.L.Ya. Karpov Institute of Physical ChemistryMoscowRussia

Personalised recommendations