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Structural analysis of SiO2 gel films by high energy electron diffraction

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Abstract

The structure of SiO2 gel-films prepared from acid and basic TEOS solutions is analyzed by high energy transmission electron diffraction method. The Si-O bond length of gel-films is 1.58 to 1.60 Å, which is shorter than that of vitreous silica (1.61 Å) but similar to that of 80 Å thick evaporated a-SiO2 film. An atomic pair peak with 0.81 Å distance exists on the reduced radial distribution functions of the gel-films, which is believed to be O-H, but being smaller than that of H2O (0.969 Å).

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Authors and Affiliations

  1. Adv. Glass R&D Cnt., Asahi Glass Co. Ltd., Kanagawa-ku, 221, Yokohama, Japan

    H. Ohsaki

  2. Dept. of Physics, Aichi Univ. of Education, 448, Kariya, Aichi, Japan

    K. Miura & A. Imai

  3. Osaka Prefectural Technical College, Saiwai-cho, 572, Neyagawa, Japan

    M. Tada

  4. Inst. de Fisica e Quimica de São Carlos, Univ. de São Paulo, 13560, São Carlos, Brazil

    M. A. Aegerter

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  1. H. Ohsaki
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  2. K. Miura
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  3. A. Imai
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  4. M. Tada
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  5. M. A. Aegerter
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Ohsaki, H., Miura, K., Imai, A. et al. Structural analysis of SiO2 gel films by high energy electron diffraction. J Sol-Gel Sci Technol 2, 245–249 (1994). https://doi.org/10.1007/BF00486249

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  • DOI: https://doi.org/10.1007/BF00486249

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