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Investigation of ripple defects on molecular beam epitaxy grown GaAs layers

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Applied Physics, De Montfort University, PO Box 143, LE1 9BH, Leicester, UK

    N. J. Kadhim

  2. School of Electrical, Electronic and Information Engineering, South Bank University, Borough Road, SE1 0AA, London, UK

    D. Mukherjee & M. Mehta

Authors
  1. N. J. Kadhim
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  2. D. Mukherjee
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  3. M. Mehta
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Kadhim, N.J., Mukherjee, D. & Mehta, M. Investigation of ripple defects on molecular beam epitaxy grown GaAs layers. J Mater Sci Lett 12, 623–625 (1993). https://doi.org/10.1007/BF00465572

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  • DOI: https://doi.org/10.1007/BF00465572

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