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Journal of Materials Science Letters

, Volume 14, Issue 20, pp 1433–1435 | Cite as

Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

  • W. J. Choi
  • S. Lee
  • Y. Kim
  • S. K. Kim
  • J. I. Lee
  • K. N. Kang
  • N. Park
  • H. L. Park
  • K. Cho
Article

Keywords

Polymer Chemical Vapour Multiple Quantum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • W. J. Choi
    • 1
  • S. Lee
    • 1
  • Y. Kim
    • 1
  • S. K. Kim
    • 1
  • J. I. Lee
    • 1
  • K. N. Kang
    • 1
  • N. Park
    • 2
  • H. L. Park
    • 2
  • K. Cho
    • 3
  1. 1.Division of Electronics and InformationKorea Institute of Science and TechnologySeoulKorea
  2. 2.Department of PhysicsYonsei UniversitySeoulKorea
  3. 3.Department of PhysicsSogang UniversitySeoulKorea

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