Optical and Quantum Electronics

, Volume 25, Issue 12, pp S935–S951 | Cite as

Implementation of symmetric Fabry-Perot quantum well electroabsorption modulators in symmetric self-electrooptic effect devices

  • P. Zouganeli
  • A. W. Rivers
  • G. Parry
  • J. S. Roberts


We report results from a symmetric cavity electroabsorption modulator (SCEM) in GaAs/AlGaAs. A reflection change of ∼ 45% with an insertion loss of 1.3 dB is obtained under 7.5 V in the normally-off mode. We discuss the factors that affect the device performance and compare the attainable performance with that of the normally-off asymmetric Fabry-Perot modulator (AFPM). We also propose a new method for an improvement of the restricted tolerances of SCEMs. Finally, we demonstrate bistable operation using two SCEMs in the symmetric self-electrooptic effect device (S-SEED) configuration, and attempt to evaluate the potential of this type of modulator for SEED applications.


Reflection Communication Network Device Performance Insertion Loss Reflection Change 
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Copyright information

© Chapman & Hall 1993

Authors and Affiliations

  • P. Zouganeli
    • 1
  • A. W. Rivers
    • 1
  • G. Parry
    • 1
  • J. S. Roberts
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity College LondonLondonUK
  2. 2.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK

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