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Implementation of symmetric Fabry-Perot quantum well electroabsorption modulators in symmetric self-electrooptic effect devices

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Abstract

We report results from a symmetric cavity electroabsorption modulator (SCEM) in GaAs/AlGaAs. A reflection change of ∼ 45% with an insertion loss of 1.3 dB is obtained under 7.5 V in the normally-off mode. We discuss the factors that affect the device performance and compare the attainable performance with that of the normally-off asymmetric Fabry-Perot modulator (AFPM). We also propose a new method for an improvement of the restricted tolerances of SCEMs. Finally, we demonstrate bistable operation using two SCEMs in the symmetric self-electrooptic effect device (S-SEED) configuration, and attempt to evaluate the potential of this type of modulator for SEED applications.

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Author notes

  1. P. Zouganeli

    Present address: Institute of Quantum Electronics, Swiss Federal Institute of Technology, CH-8093, Zurich, Switzerland

Authors and Affiliations

  1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, London, UK

    P. Zouganeli, A. W. Rivers & G. Parry

  2. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD, Sheffield, UK

    J. S. Roberts

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  1. P. Zouganeli
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  2. A. W. Rivers
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  3. G. Parry
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Zouganeli, P., Rivers, A.W., Parry, G. et al. Implementation of symmetric Fabry-Perot quantum well electroabsorption modulators in symmetric self-electrooptic effect devices. Opt Quant Electron 25, S935–S951 (1993). https://doi.org/10.1007/BF00430336

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  • DOI: https://doi.org/10.1007/BF00430336

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