Abstract
A new type of multiple quantum well (MQW) reflection modulator, based on the multilayer active antireflection coating (A-ARC) is proposed and compared theoretically with the conventional MQW modulator based on the asymmetric Fabry-Perot etalon (AFP). It is shown that both a large on-off ratio and a low operating voltage can be achieved. It will be demonstrated that the A-ARC device matches the performance of the recently reported asymmetric Fabry-Perot modulator while requiring smaller device thickness. It will also be shown that A-ARC MQW modulators exhibit superior tolerance to the unavoidable thickness variations, thus allowing fabrication of large-area uniform arrays of modulators.
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Obeidat, A., Khurgin, J. & Li, S. Active antireflection coating electrooptic modulator. Opt Quant Electron 25, S917–S923 (1993). https://doi.org/10.1007/BF00430334
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DOI: https://doi.org/10.1007/BF00430334