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InGaAs/GaAs multiple-quantum-well modulators and switches

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Abstract

The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multiple-quantum-well (MQW) structures is presented. The absorption and refractive index changes (Δα, Δn) of In0.2Ga0.8As/GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit Δα/α0 and Δn/α0 give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented.

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Authors and Affiliations

  1. Fachgebiet Optoelektronik, Universität Duisburg, D-47048, Duisburg, Germany

    A. Stöhr, O. Humbach, S. Zumkley, G. Wingen, G. David & D. Jäger

  2. Fachgebiet Werkstoffe der Elektrotechnik, Universität Duisburg, D-47048, Duisburg, Germany

    B. Bollig

  3. Fraunhofer-Institut für Angewandte Festkörperphysik, D-79108, Freiburg, Germany

    E. C. Larkins & J. D. Ralston

Authors
  1. A. Stöhr
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  2. O. Humbach
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  4. G. Wingen
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  5. G. David
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  9. J. D. Ralston
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Stöhr, A., Humbach, O., Zumkley, S. et al. InGaAs/GaAs multiple-quantum-well modulators and switches. Opt Quant Electron 25, S865–S883 (1993). https://doi.org/10.1007/BF00430331

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