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Preparation of love density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Applied Chemistry, Aichi Institute of Technology, 470-03, Yachigusa, Yakusacho, Toyoda, Japan

    K. Sugiyama & K. Norizuki

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  1. K. Sugiyama
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  2. K. Norizuki
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Sugiyama, K., Norizuki, K. Preparation of love density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration. J Mater Sci Lett 14, 1720–1722 (1995). https://doi.org/10.1007/BF00422686

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  • DOI: https://doi.org/10.1007/BF00422686

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