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Transmission electron microscopy characterization of a fluorine-doped Si3N4

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Journal of Materials Science Letters

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Authors and Affiliations

  1. University of Bayreuth, Institute of Materials Research, Ludwig-Thoma-Str 368, D-95447, Bayreuth, Germany

    H. -J. Kleebe

  2. Department of Materials Science, Toyohashi University of Technology, Hibarigaoka, Tempaku-cho 1-1, 441, Toyohashi, Japan

    G. Pezzotti

  3. Department of Materials, Kyoto Institute of Technology, 606, Matsugasaki, Kyoto, Japan

    T. Nishida

Authors
  1. H. -J. Kleebe
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  2. G. Pezzotti
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  3. T. Nishida
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Kleebe, H.J., Pezzotti, G. & Nishida, T. Transmission electron microscopy characterization of a fluorine-doped Si3N4 . J Mater Sci Lett 14, 1668–1671 (1995). https://doi.org/10.1007/BF00422670

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  • DOI: https://doi.org/10.1007/BF00422670

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