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Effect of the nitrogen partial pressure on the preferred orientation of TiN thin films

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Departments of Material Science and Engineering, Pohang University of Science and Technology, 790-330, Pohang, Kyungbuk, Korea

    H. H. Yang & J. H. Je

  2. Department of Physics, Pohang University of Science and Technology, 790-330, Pohang, Kyungbuk, Korea

    K. -B. Lee

Authors
  1. H. H. Yang
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  2. J. H. Je
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  3. K. -B. Lee
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Yang, H.H., Je, J.H. & Lee, K.B. Effect of the nitrogen partial pressure on the preferred orientation of TiN thin films. J Mater Sci Lett 14, 1635–1637 (1995). https://doi.org/10.1007/BF00422660

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  • DOI: https://doi.org/10.1007/BF00422660

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