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Enhanced disordering of GaAs/AIGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition

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Authors and Affiliations

  1. Optical Electronics Laboratory, Korea Institute of Science and Technology, Cheongryang P.O. Box 131, 130-650, Seoul, Korea

    W. J. Choi, J. I. Lee, I. K. Han & K. N. Kang

  2. Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Cheongryang P.O. Box 131, 130-650, Seoul, Korea

    Y. Kim

  3. Department of Physics, Yonsei University, 120-749, Seoul, Korea

    H. L. Park

  4. Department of Physics, Sogang University, C.P.O Box 1142, 100-611, Seoul, Korea

    K. Cho

Authors
  1. W. J. Choi
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  2. J. I. Lee
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  3. I. K. Han
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  4. K. N. Kang
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  5. Y. Kim
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  6. H. L. Park
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Choi, W.J., Lee, J.I., Han, I.K. et al. Enhanced disordering of GaAs/AIGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition. J Mater Sci Lett 13, 326–328 (1994). https://doi.org/10.1007/BF00420787

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  • DOI: https://doi.org/10.1007/BF00420787

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