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Ti-silicide with improved thermal stability using silicidation through oxide on amorphous silicon substrates

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Materials Engineering, Hanyang University, Seoul, Korea

    Y. S. Hwang, S. H. Paek & S. G. Kang

  2. Electron and Electric Division, Korea Institute of Industry Technology Information, Korea

    H. C. Cho

  3. R&D Department, Samsung Electronics, Kihung-eup, Kyunki-do, Korea

    J. S. Choi, S. I. Lee & J. K. Lee

Authors
  1. Y. S. Hwang
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  2. S. H. Paek
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  3. S. G. Kang
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  4. H. C. Cho
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  5. J. S. Choi
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  6. S. I. Lee
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  7. J. K. Lee
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Hwang, Y.S., Paek, S.H., Kang, S.G. et al. Ti-silicide with improved thermal stability using silicidation through oxide on amorphous silicon substrates. J Mater Sci Lett 12, 1726–1728 (1993). https://doi.org/10.1007/BF00418845

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  • DOI: https://doi.org/10.1007/BF00418845

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