Abstract
Polycrystalline materials of BaSn1−xSbxO3−δ and Ba1−yLaySnO3−δ were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO3 were obtained to be x=0.18 for BaSn1−xSbxO3−δ and y<0.052 for Ba1-yLaySnO3−δ. The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn1−xSbxO3−δ. At lower temperature, magnetic susceptibilities of BaSn1−xSbxO3−δ and Ba1−yLaySnO3−δ satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn4+ site, and forming a Sn4++e− state in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration.
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Huang, T., Nakamura, T., Itoh, M. et al. Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium. Journal of Materials Science 30, 1556–1560 (1995). https://doi.org/10.1007/BF00375264
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DOI: https://doi.org/10.1007/BF00375264