Abstract
Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220°C, polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity of the film was in the range 1.7–2.7 μΩ cm.
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Maruyama, T., Ikuta, Y. Copper thin films prepared by chemical vapour deposition from copper dipivalylmethanate. JOURNAL OF MATERIALS SCIENCE 28, 5540–5542 (1993). https://doi.org/10.1007/BF00367827
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DOI: https://doi.org/10.1007/BF00367827