Abstract
Hafnia (HfO2) ceramics containing 0.0, 5.0, and 10.0 vol% Al2O3, respectively, were sintered at 1600°C for various periods from 2–24 h. Abnormal grain growth was found to occur in the Al2O3-containing compositions. Hafnia containing 5.0 vol% Al2O3 exhibits an average grain size of almost double that of the Al2O3-free hafnia matrix, coupled with a much wider grain-size distribution. The material containing 10.0 vol% Al2O3 shows a smaller average grain size than the composition containing 5.0 vol% Al2O3. However, its average grain size is still larger than that of the Al2O3-free hafnia on sintering at 1600°C for more than 8 h. Microstructural characterization, carried out using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) equipped with an energy dispersive analysis facility (EDX), indicated that there existed a continuous segregant layer at the grain boundaries and grain junctions in the Al2O3-free hafnia. Hafnia exhibits a low solubility in the segregant layer phase which inhibits the growth of the hafnia grains. The Al2O3 particles act as a scavenger for the silicon-rich glassy phase, damaging the continuous nature of the boundary segregant layer and promoting grain growth in the Al2O3-doped hafnia ceramics. The microstructural development at the sintering temperature is an overall result of the concurrent scavenger effect and grain pinning by the Al2O3 particles.
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R. C. Garvie, R. H. Hannink and R. T. Pascoe, Nature (Lond.) 258 (1975) 703.
J. Wang, H. P. Li and R. Stevens, J. Mater. Sci. 27 (1992) 5397.
R. Ruh and W. R. Corfield, J. Am. Ceram. Soc. 53 (1970) 126.
H. J. Garrett, Am. Ceram. Soc. Bull. 42 (1963) 201.
J. Wang and R. Stevens, Ceram. Acta. 3 (1991) 41.
S. L. Dole, O. Hunter Jr and F. W. Calderwood, J. Am. Ceram. Soc. 63 (1980) 136.
S. L. Dole, O. Hunter Jr and C. J. Wooge, ibid. 60 (1977) 488.
F. F. Lange, J. Mater. Sci. 17 (1982) 225.
H. Bernard, Report CEA-R-5090. Commissariat a l'Energie Atomique, CEN-Saclay, France (1981).
E. P. Butler and J. Drennan, J. Am. Ceram. Soc. 65 (1982) 474.
R. Stevens, “An introduction to zirconia” (Magnesium Elektron, Twickenham, UK, 1986).
C. E. Curtis and H. G. Sowman, J. Am. Ceram. Soc. 36 (1953) 190.
M. Ruhle, N. Claussen and A. H. Heuer, in “Advances in Ceramics,” Vol. 12, “Science and technology of zirconia II”, edited by N. Claussen, M. Ruhle and A. H. Heuer (American Ceramic Society, Columbus, OH, 1984 pp. 352–70.
H. Schubert, N. Claussen and M. Ruhle, ibid.“Advances in Ceramics,” Vol.12, “Science and technology of zirconia II”, edited by N. Claussen, M. Ruhle and A. H. Heuer (American Ceramic Society, Columbus, OH, 1984 p. 766–773.
A. J. A. Winnubst, G. S. A. Theunissen, W. F. M. Groot Zevert and A. J. Burggraaf, in “Science of ceramics,” Vol. 14, edited by D. Taylor (Institute of Ceramics, Stoke-on-Trent, UK, 1988) pp. 309–14.
T. Stoto, M. Nauer and C. Carry, J. Am. Ceram. Soc. 74 (1991) 2615.
K. Keizer, M. J. Verkerk and A. J. Burggaaf, Ceram. Int. 5 (1979) 143.
R. W. Rice, S. W. Freiman and P. F. Becher, J. Am. Ceram. Soc. 64 (1981) 345.
R. W. Rice and S. W. Freiman, ibid. 64 (1981) 350.
R. W. Davidge, Acta Metall. 29 (1981) 1695.
F. A. Nichols, J. Appl. Phys. 37 (1966) 4599.
F. F. Lange and M. M. Hirlinger, J. Am. Ceram. Soc. 70 (1987) 827.
A. V. Shevchenko, L. M. Lopato and G. I. Gerasimyuk, Izv. Akad. Nauk, SSSR. Neorg. Mat. 26 (1990) 839.
S. G. Popov, M. V. Paromova and Z. Ya Kulikova, ibid.Izv. Akad. Nauk, SSSR. Neorg. Mat. 26 (1990) 1002.
K. C. Radford and R. J. Bratton, J. Mater. Sci. 14 (1979) 59.
K. Niihara, J. Ceram. Soc. Jpn 99 (1991) 945.
F. F. Lange and M. M. Hirlinger, J. Am. Ceram. Soc. 67 (1984) 164.
S. Hori, R. Kurita, M. Yoshimura and S. Somiya, in “Advances in Ceramics, Vol. 24A, “Science and technology of zirconia III”, edited by S. Somiya, N. Yamamoto and H. Hanagida (American Ceramics Society, Westerville, OH, 1988) pp. 423–9.
M. R. Anseau, J. P. Biloque and P. Fierens, J. Mater. Sci. 11 (1976) 578.
J. S. Reed, “Introduction to the principles of ceramic processing” (Wiley, Singapore, 1989).
N. M. Beekmans and L. Heyne, Electrochim. Acta 21 (1976) 303.
A. J. G. Ellison and A. Navrotsky, J. Am. Ceram. Soc. 75 (1992) 1430.
I. A. Aksay, D. M. Dabbs and M. Sarikaya, ibid. 74 (1991) 2343.
R. F. Davis and J. A. Pask, in “High temperature oxides”, Part IV, “Refractory glasses, glass-ceramics and ceramics,” edited by A. M. Alper (Academic Press, New York, 1970) pp. 37–76.
R. R. Dayal, R. E. Johnson and A. Muan, J. Am. Ceram. Soc. 50 (1967) 537.
E. Di Rupo and M. R. Anseau, J. Mater. Sci. 15 (1980) 114.
M. L. Mecartney, J. Am. Ceram. Soc. 70 (1987) 54.
Y. Yoshizawa and T. Sakuma, ibid. 73 (1990) 3069.
J. F. Shackelford, P. S. Nicholson and W. W. Smeltzer, Am. Ceram. Soc. Bull. 53 (1974) 865.
R. Chaim, A. H., Heuer and D. G. Brandon, J. Am. Ceram. Soc. 69 (1986) 243.
F. F. Lange, ibid. 69 (1986) 240.
S. Dou, P. D. Pacey, C. R. Masson and B. R. Marple, ibid. 68 (1985) C-80.
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Wang, J., Ponton, C.B. & Marquis, P.M. Abnormal grain growth in alumina-doped hafnia ceramics. JOURNAL OF MATERIALS SCIENCE 29, 3577–3590 (1994). https://doi.org/10.1007/BF00357322
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DOI: https://doi.org/10.1007/BF00357322