Journal of Materials Science

, Volume 30, Issue 22, pp 5687–5690 | Cite as

Investigation of the process of diamond formation from SiC under high pressure and high temperature

  • Li Gou
  • Shiming Hong
  • Qingquan Gou


SiC powder or graphite in contact with cobalt, nickel or a Ni70Mn25Co5 alloy was treated at high pressure and high temperature in stable region of diamond. It was found that Ni70Mn25Co5 alloy is more effective in the process of diamond formation from SiC than the others, but the difference was not apparent when graphite was used instead of SiC. Using the Ni70Mn25Co5 alloy, diamond formed rapidly with the decomposition of SiC at a pressure of 5.4–6.0 GPa and temperature 1350–1570°C, and the growth tended to stagnate after 6 min, when SiC was completely exhausted. X-ray diffraction showed that the relative intensity of the diffraction lines of diamond and graphite was nearly constant in the samples synthesized under the same conditions for 2, 4 and 6 min. The results suggest that diamond and graphite may be formed directly and respectively from separated carbon atoms in a short time.


Polymer Nickel Graphite Cobalt High Pressure 
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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • Li Gou
    • 1
  • Shiming Hong
    • 1
  • Qingquan Gou
    • 1
  1. 1.Institute of Applied PhysicsChengdu University of Science and TechnologyChendgduPeople’s Republic of China

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