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Journal of Materials Science

, Volume 30, Issue 13, pp 3471–3474 | Cite as

Observation of deep levels associated with dislocations in n-type Hg0.3Cd0.7Te

  • J. F. Barbot
  • P. Girault
  • C. Blanchard
  • I. A. Hümmelgen
Article

Abstract

Deep level transient spectroscopy (DLTS) has been used to study the traps associated with dislocations in n-type Hg0.3Cd0.7Te. Dislocations have been generated by ion implantation at high fluence. Two of the broadened lines (E1=Ec−0.22eV and E1=Ec−0.34eV), we have observed, show a logarithmic dependence with the filling pulse. They are characteristic of point defect clouds surrounding or generated by the dislocations. An unusual broadened line (E2=Ec−0.27eV) has also been observed, its amplitude decreases for filling pulses longer than 50 μs. This can be explained by a configuration change of the defect leading to the appearance of a new DLTS line. In addition, an electron trap (EP4=Ec−0.22eV), which seems to behave like an isolated point defect, has also been found.

Keywords

Polymer Spectroscopy Material Processing Point Defect Deep Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • J. F. Barbot
    • 1
  • P. Girault
    • 1
  • C. Blanchard
    • 1
  • I. A. Hümmelgen
    • 2
  1. 1.Laboratoire de Métallurgie Physique URA 131 CNRSUniversité de PoitiersPoitiers CedexFrance
  2. 2.Universidade Federal do ParanaCuritiba PRBrazil

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