Abstract
The model for the interacting diffusion of two dopants in silicon is analysed in the limit of high peak concentration of one dopant. Several distinct regions of dopant behaviour are identified, in each of which the governing equations are significantly simpler than the full problem. Of particular practical interest is an interior layer which occurs at the pn junction.
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Li, Fb. Interacting diffusion of two dopants through crystalline silicon. Appl. Phys. A 51, 398–404 (1990). https://doi.org/10.1007/BF00348380
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DOI: https://doi.org/10.1007/BF00348380