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MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

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Abstract

We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.

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Author notes

  1. R. Bergmann

    Present address: School of Electrical Engineering, The University of New South Wales, 2033, Kensington, N.S.W., Australia

  2. R. P. Zingg

    Present address: Institute for Integrated Systems, Swiss Federal Institute of Technology, CH-8092, Zürich, Switzerland

Authors and Affiliations

  1. Max-Planck-Institut (MPI) für Festkörperforschung, Heisenbergstr. 1, W-7000, Stuttgart 80, Fed. Rep. Germany

    R. Bergmann, E. Czech, I. Silier, N. Nagel, E. Bauser & H. J. Queisser

  2. Institut für Mikroelektronik Stuttgart (IMS), Allmandring 30a, W-7000, Stuttgart 80, Fed. Rep. Germany

    R. P. Zingg & B. Höfflinger

Authors
  1. R. Bergmann
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  2. E. Czech
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  3. I. Silier
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  4. N. Nagel
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  5. E. Bauser
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  6. H. J. Queisser
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  7. R. P. Zingg
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  8. B. Höfflinger
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Bergmann, R., Czech, E., Silier, I. et al. MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy. Appl. Phys. A 54, 103–105 (1992). https://doi.org/10.1007/BF00348140

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  • DOI: https://doi.org/10.1007/BF00348140

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