Abstract
Measurements of velocity distributions of C, B, and Si atoms released in sputtering processes from graphite and carbide targets bombarded with noble gas ions in the 1 keV range are described. Laser-induced fluorescence spectroscopy in the VUV is applied. The VUV radiation necessary to excite the sputtered atoms is provided by stimulated anti-Stokes Raman scattering (SARS) in H2. Surface binding energies are derived from measured velocity distributions; concentrations of sputtered particles, fluxes and sputtering yields are determined.
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Röwekamp, M., Goehlich, A. & Döbele, H.F. Diagnostics of sputtering processes of carbon and carbides by laser-induced fluorescence spectroscopy in the VUV at 166 nm. Appl. Phys. A 54, 61–67 (1992). https://doi.org/10.1007/BF00348132
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DOI: https://doi.org/10.1007/BF00348132