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The distribution of trapping states at the Al/InP-oxide interface

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Abstract

The volume density of trapping states is derived throughout the metal-dielectric interface. This has been facilitated by equating the dielectric loss component to the tunneling conductance using a new relaxation time formulation. Subsequently, the trap distribution at the Al/InPO4 interface has featured a peak of 1.15×1019 cm−3 at about 15 Å from the Al contacting electrode. The new approach could be extended to deal with semiconductor-dielectric interfaces.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Mutah, P.O. Box 7, Karak, Jordan

    S. N. Al-Refaie

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  1. S. N. Al-Refaie
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Al-Refaie, S.N. The distribution of trapping states at the Al/InP-oxide interface. Appl. Phys. A 55, 213–217 (1992). https://doi.org/10.1007/BF00334226

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  • DOI: https://doi.org/10.1007/BF00334226

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