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Aluminium oxide thin films prepared by plasma-enhanced chemical vapour deposition

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Abstract

Thin films of aluminium oxide have been deposited on glass, quartz, Si(100), steel, nickel, and aluminium by plasma-enhanced chemical vapour deposition (PECVD) using aluminium acetylacetonate (Al(acac)3) as precursor. The deposits are hard (up to 2370 HK) and show good adherence to the substrates. The influence of various experimental parameters on deposition rate, film composition and hardness has been studied. The bias turned out to be the most effective parameter.

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Authors and Affiliations

  1. Department of Organic Chemistry, University of Tübingen, Auf der Morgenstelle 18, W-7400, Tübingen, Fed. Rep. Germany

    Yu.-Wen Zhao & H. Suhr

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  1. Yu.-Wen Zhao
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  2. H. Suhr
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On leave from Beijing Solar Energy Research Institute, Beijing, P.R. China

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Zhao, YW., Suhr, H. Aluminium oxide thin films prepared by plasma-enhanced chemical vapour deposition. Appl. Phys. A 55, 176–179 (1992). https://doi.org/10.1007/BF00334220

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