Abstract
The resistance of μm-scaled contacts to heavily doped silicon was measured as a function of current and temperature. To kinds of characteristics were identified and modelled empirically. The first kind pertains to a pair of contacts to n-type silicon and is dominated by self heating. For contacts to p-type silicon the temperature and current dependence of the contact resistance is modelled very well by a new equivalent circuit, which consists of two diodes connected anti parallel. Both types of characteristics are verified by experimental data. Circuit properties are not affected significantly by the contact resistances.
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Keller, W.W. Electrical and thermal properties of μm-scaled contacts with Ti/TiN-barrier to heavily doped silicon. Appl. Phys. A 56, 457–462 (1993). https://doi.org/10.1007/BF00332582
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DOI: https://doi.org/10.1007/BF00332582