Abstract
Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.
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Serna, R., Afonso, C.N., Petford-Long, A.K. et al. Structural ripple formation in Ge/Sb multilayers induced by laser irradiation. Appl. Phys. A 58, 197–202 (1994). https://doi.org/10.1007/BF00332179
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DOI: https://doi.org/10.1007/BF00332179