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Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures

  • Surfaces And Multilayers
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Abstract

Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77–300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively.

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Authors and Affiliations

  1. Department of Physics, Nanjing University, 210008, Nanjing, People's Rep. of China

    Hongtao Shi, Youdou Zheng & Renkuan Yuan

  2. Department of Physics, Jiangsu Educational Institute, 210013, Nanjing, People's Rep. of China

    Yongbin Wang

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  1. Hongtao Shi
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  2. Youdou Zheng
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  4. Renkuan Yuan
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Shi, H., Zheng, Y., Wang, Y. et al. Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures. Appl. Phys. A 57, 573–575 (1993). https://doi.org/10.1007/BF00331761

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  • DOI: https://doi.org/10.1007/BF00331761

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