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Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

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Abstract

Pb1−x−y Sn x Ge y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ<20μm. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10−2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×1013 cm Hz1/2 W−1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 1012 cm−2 s−1 to 1018 cm−2 s−1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.

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Authors and Affiliations

  1. Research Development and Production Center ORION, Plekhanova 2, 111123, Moscow, Russia

    V. F. Chishko, A. I. Dirochka, I. L. Kasatkin & V. V. Osipov

  2. Institute of Problems of the Study of Materials, Ukranian Academy of Sciences, Chernovtsy, Ukraine

    E. I. Slyn'ko

  3. Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Moscow Region, Russia

    V. V. Tretinik

Authors
  1. V. F. Chishko
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  2. A. I. Dirochka
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  3. I. L. Kasatkin
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  4. V. V. Osipov
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  5. E. I. Slyn'ko
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  6. V. V. Tretinik
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Chishko, V.F., Dirochka, A.I., Kasatkin, I.L. et al. Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films. Appl. Phys. A 57, 567–572 (1993). https://doi.org/10.1007/BF00331760

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  • DOI: https://doi.org/10.1007/BF00331760

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